| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2008-04-01 |
| タイトル |
|
|
タイトル |
Interfacial Characteristics of Copper/Diffusion Barrier/Low DielectricConstant Material Systems at Elevated Temperatures |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 主題 |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Low dielectricconstant |
| 主題 |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
copper |
| 主題 |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
diffusion barrier |
| 主題 |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
integrated circuits |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 作成者 |
Chen, J. S.
Jeng, J. S.
Chang, C. C.
|
| 内容記述 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Thermal reactions of sputtered Cu films on the fluorinated silicon oxide (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400 to 800 °C were examined. It is found that the sheet resistance values of allsamples decreased after annealing at 400 to 600 °C and increased after annealing at 700 or 800 °C. Without the barrierlayer, the increase of sheet resistance was accompanied with the dewetting of Cu films and the carbon outdiffusion for Cu/OSG sample or the Cu indiffusion of the Cu/FSG sample. When a TiN/Ti or a TaN/Ta barrier layer was interposed between Cu and the dielectriclayer, the degree of dewetting of Cu film was significantly reduced for both systems. The reaction characteristics of the two dielectric svstems uoon vacuum annealing, with and without the barrierlaver. are discussed. |
|
言語 |
en |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 書誌情報 |
en : International Journal of the Society of Materials Engineering for Resources
巻 10,
号 2,
p. 138-141,
発行日 2002-09-01
|
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
13479725 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA1095475X |
| 出版者 |
|
|
出版者 |
The Society of Materilas Engineering for resources of Japan |
|
言語 |
en |
| 関連情報 |
|
|
関連タイプ |
isIdenticalTo |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.5188/ijsmer.10.138 |
ijsmer10-2d.pdf (905.8 kB)
