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Biomimetic Micropatteming of Titanium Dioxide Thin Films for Gate Dielectrics
http://hdl.handle.net/10295/744
http://hdl.handle.net/10295/744ac10029c-dfc2-4115-b9f3-f4574cef5a02
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ijsmer10-1g.pdf (725.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2008-03-28 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Biomimetic Micropatteming of Titanium Dioxide Thin Films for Gate Dielectrics | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 主題 | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Biomimetic | |||||||||||
| 主題 | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Micropatterning | |||||||||||
| 主題 | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Titanium dioxide | |||||||||||
| 主題 | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Thin film | |||||||||||
| 主題 | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Gate oxide | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| アクセス権 | ||||||||||||
| アクセス権 | open access | |||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
| 作成者 |
Koumoto, K
× Koumoto, K
× Masuda, Y
× Wang, D.J.
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| 内容記述 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | We have succeeded in fabricating micropatterns of TiO2 thin films on self-assembled monolayers (SAMs). SAMs of OTS (octadecyltrichlorosilane) were formed on Si wafers and modified by UV irradiation using a photomask to generate octadecyl/silanol-pattern. They were used as templates to deposit TiO2 thin films by the use of TDD (titanium dichloride diethoxide) dissolved in toluene. Amorphous films were selectively deposited on silanol regions. Line width variation of the pattern was improved to be well below the current electronics design rule, 5%. Dielectric constant of an as-deposited TiO2 thin film, dielectric properties of TiO2/SiO2/Si interface and leakage current density were evaluated by measuring I-V and C-V characteristics of the MOS (metal-oxide-semiconductor) device. Rather low leakage current was observed under high electric fields and the TiO2 thin film with the thickness ～18 nm showed dielectric constant of ～22 at 100 kHz, which is more than 5 times as large as that of a usual SiO2 dielectric layer. However, the resistivity of the TiO2 film was estimated to be not high enough and the dielectric constant depended on frequency, both of which are disadvantages for a gate dielectric. | |||||||||||
| 言語 | en | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 書誌情報 |
en : International Journal of the Society of Materials Engineering for Resources 巻 10, 号 1, p. 49-52, 発行日 2002-03-01 |
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| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 13479725 | |||||||||||
| 収録物識別子 | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA1095475X | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | The Society of Materilas Engineering for resources of Japan | |||||||||||
| 言語 | en | |||||||||||
| 関連情報 | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | https://doi.org/10.5188/ijsmer.10.49 | |||||||||||
