| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2021-11-25 |
| タイトル |
|
|
タイトル |
GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 作成者 |
Sato, Yuichi
Taniguchi, Shingo
Saito, Sora
Xue, Houyao
Saito, Tsubasa
|
| 内容記述 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices. |
|
言語 |
en |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 書誌情報 |
AIP Advances
巻 11,
号 075110,
発行日 2021
|
| 収録物識別子 |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2158-3226 |
| 出版者 |
|
|
出版者 |
American Institute of Physics |
| 関連情報 |
|
|
関連タイプ |
isIdenticalTo |
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1063/5.0052379 |
| 権利情報 |
|
|
権利情報 |
© 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
riA_2021_12 (5.0 MB)
