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GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates
http://hdl.handle.net/10295/00005836
http://hdl.handle.net/10295/0000583637ad0907-4354-4f21-8b22-c251cc4bff24
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-11-25 | |||||
タイトル | ||||||
タイトル | GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
作成者 |
Sato, Yuichi
× Sato, Yuichi× Taniguchi, Shingo× Saito, Sora× Xue, Houyao× Saito, Tsubasa |
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内容記述 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices. | |||||
言語 | en | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
書誌情報 |
AIP Advances 巻 11, 号 075110, 発行日 2021 |
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収録物識別子 | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2158-3226 | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
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関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/5.0052379 | |||||
権利情報 | ||||||
権利情報 | © 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |