@article{oai:air.repo.nii.ac.jp:00001310,
 author = {ロス, キャロラインA. and 原谷, 進 and カスターノ, フェルナンド J. and ほか and ROSS, Caroline A. and HARATANI, Susumu and CASTANO, Fernando J.},
 issue = {1/2},
 journal = {素材物性学雑誌},
 month = {Dec},
 note = {The characteristic points of MRAM are compared with those of DRAM, Flash memory,
SRAM, and FeRAM. The differences in PSV-MRAM and MTJ-MRAM are discussed in terms
of the directions of sense current, CIP or CPP, and connections of CMOS with MR elements.
An MRAM-type structure was accomplished with three layers of PSV element, NiFe soft layer
(6nm) / Cu non-magnetic layer (3-6nm) / Co hard magnetic layer (4nm) on Si-wafer. Each PSV
element of 80nm X 150nm was sandwiched by a sense line and a word line at the intersection of
these lines. Furthermore, switching phenomena, which were observed in magnetic hysteresis
loop by using PSV thin films, are also discussed along with the size limitation of PSV dots.},
 pages = {43--51},
 title = {MRAM型構造の作製と磁気特性},
 volume = {14},
 year = {2001}
}