{"created":"2023-07-25T10:22:02.409559+00:00","id":1272,"links":{},"metadata":{"_buckets":{"deposit":"b9343fc4-e595-43be-9d5b-70e75dc051b0"},"_deposit":{"created_by":15,"id":"1272","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"1272"},"status":"published"},"_oai":{"id":"oai:air.repo.nii.ac.jp:00001272","sets":["590:664:665:819"]},"author_link":["4231","4232","4233"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"6","bibliographicVolumeNumber":"16","bibliographic_titles":[{"bibliographic_title":"素材物性学雑誌","bibliographic_titleLang":"ja"}]}]},"item_10001_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"It has been important to understand interfacial phenomena of semiconductor/metal thin-films, like Fermi level pinning, and control them for highly reliable ULSI. GaAs is known as a valuable material used for high-frequency devices, high-efficient light-emitting devices, and so on. In order to understand and control interfacial phenomena on GaAs/metal contacts, electrical properties of GaAs/metal? thin-films (Au, Pt, Cu, AI) contacts by RF magnetron sputtering have been studied by measuring I~V and l/C2-V properties before and after annealing. The results showed that the slope of barrier heights ¢ B toward to metal work functions X m was about 0.1 ; hence, Schttoky model is probably unsuitable and Bardeen model may be well for GaAs, a covalent bond semiconductor. In cases of ohmic properties, the alloy of GaAs and metals formed by annealing and increased impurity concentration at interfaces may contribute for changing the electrical properties into ohmic ones.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本素材物性学会","subitem_publisher_language":"ja"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1724099666130":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"09199853","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AN10140273","subitem_source_identifier_type":"NCID"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"作成者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 亮","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"浅野, 清光","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"4231","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"SASAKI, Tohru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4232","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"ASANO, Kiyomitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4233","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-16"}],"displaytype":"detail","filename":"sozai16a1.pdf","filesize":[{"value":"575.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"sozai16a1.pdf","url":"https://air.repo.nii.ac.jp/record/1272/files/sozai16a1.pdf"},"version_id":"1eb63b57-4aa1-4660-8e46-65d39446116a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"RF magnetron sputtering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"metal/semiconductor contacts","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Schottky barrier","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Bardeen model","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"電気的特性による金属薄膜/GaAs接触界面の研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"電気的特性による金属薄膜/GaAs接触界面の研究","subitem_title_language":"ja"},{"subitem_title":"Interface Properties of GaAs/Metal Thin-Films Contacts by Electrical Measurements","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["819"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-10-19"},"publish_date":"2008-10-19","publish_status":"0","recid":"1272","relation_version_is_last":true,"title":["電気的特性による金属薄膜/GaAs接触界面の研究"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2024-08-25T10:44:08.539550+00:00"}