{"created":"2023-07-25T10:21:57.835486+00:00","id":1167,"links":{},"metadata":{"_buckets":{"deposit":"c21e4cd2-6da7-4828-912f-70d93db5e779"},"_deposit":{"created_by":3,"id":"1167","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1167"},"status":"published"},"_oai":{"id":"oai:air.repo.nii.ac.jp:00001167","sets":["590:591:765:766"]},"author_link":["3967","3968","3966","3969"],"item_10002_alternative_title_34":{"attribute_name":"別タイトル","attribute_value_mlt":[{"subitem_alternative_title":"Temperature Dependence of Dissolution at Dislocations on the (111) Surface of Copper Crystal under Potentiastatic Electrolysis"}]},"item_10002_biblio_info_36":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1985-10-22","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"89","bibliographicPageStart":"83","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"秋田大学鉱山学部研究報告"}]}]},"item_10002_description_29":{"attribute_name":"内容記述（抄録）","attribute_value_mlt":[{"subitem_description":"The (111) surface of copper crystal was etched electrolytically under a constant overpotential of 143±10 mV in a solution containing 5 kmol'm-3 NaCI, 0.25 kmol'm-3 NaBr and 10-4 kmol'm-3 CuCI at different temperatures from 275 to 307 K. The depth and width of dislocation etch pits and the dissolved amount of a matrix surface were measured using optical and interference microscopes. From the variation of these quantities with an etching time, the\nvertical dissolution rate along a dislocation line, Vd, the lateral one, 1.>, and the vertical one of matrix surface, v\" were determined. These dissolution rates showed a very different dependence on etching temperature. The value of log Vd\nincreased steeply at a low temperature and then decreased gradually with an increase of temperature. The value of log v, increased more slowly at higher temperatures. On the other hand, log 1.> increased linearly with an increase of temperature. These temperature dependencies were discussed on the basis of the nucleation theory of crystal dissolution.","subitem_description_type":"Other"}]},"item_10002_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"秋田大学鉱山学部"}]},"item_10002_source_id_27":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03898040","subitem_source_identifier_type":"ISSN"}]},"item_10002_source_id_35":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AN00010307","subitem_source_identifier_type":"NCID"}]},"item_10002_version_type_37":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"今清水, 雄二"}],"nameIdentifiers":[{"nameIdentifier":"3966","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"渡辺, 慈朗"}],"nameIdentifiers":[{"nameIdentifier":"3967","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"IMASHIMIZU, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3968","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"WATANABE, Jiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3969","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-16"}],"displaytype":"detail","filename":"imas2.pdf","filesize":[{"value":"685.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"imas2.pdf","url":"https://air.repo.nii.ac.jp/record/1167/files/imas2.pdf"},"version_id":"84d4b9c3-4299-4c4f-844e-002d865ebb87"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"定電位電解","subitem_subject_scheme":"Other"},{"subitem_subject":"Cu結晶","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"定電位電解におけるCu結晶(111)面転位位置の溶解の温度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"定電位電解におけるCu結晶(111)面転位位置の溶解の温度依存性"}]},"item_type_id":"10002","owner":"3","path":["766"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-08-25"},"publish_date":"2008-08-25","publish_status":"0","recid":"1167","relation_version_is_last":true,"title":["定電位電解におけるCu結晶(111)面転位位置の溶解の温度依存性"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-25T11:20:03.467950+00:00"}